Mesa waveguide GaAs/GaAlAs injection laser grown by metalorganic chemical vapor deposition

Journal Article · Mon Jun 01 00:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92180· OSTI ID:6446724

Scifres, D R; Burnham, R D; Streifer, W

An easily fabricated semiconductor laser, utilizing a mesa waveguide structure with a lenslike tapered active region for control of the optical laser mode, has been grown by metalorganic-chemical vapor deposition. This index-guided laser, which has thresholds of 40--60 mA and high differential quantum efficiency (approx.40--50%), operates in the fundamental transverse mode up to its catastrophic damage limit. Single longitudinal mode is also obtained to greater than twice threshold.

• Research Organization: Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, California 94304
• OSTI ID: 6446724
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DAMAGE
DEPOSITION
EFFICIENCY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LENSES
OPTICAL PROPERTIES
OSCILLATION MODES
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
WAVEGUIDES