Spectral characteristics of (GaAl)As diode lasers at 1. 7 K

Journal Article · Wed Aug 15 04:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95253· OSTI ID:6613142

Harrison, J; Mooradian, A

The spectral broadening as a function of output power for transverse junction stripe (GaAl)As diode lasers has been measured at 1.7 K. The power-independent linewidth was observed to be about 30 MHz in reasonable agreement with the model involving electron number fluctuations in the device.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 6613142
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
LASERS
LINE BROADENING
LINE WIDTHS
PNICTIDES
POWER
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
ULTRALOW TEMPERATURE