Frequency stability and control characteristics of (GaAl)as semiconductor lasers

Technical Report · Fri Jan 01 04:00:00 EST 1982

OSTI ID:5509457

Mooradian, A; Welford, D

A study of fundamental linewidth broadening mechanisms in cw (GaAl)As diode lasers is presented. The linewidths were observed to increase linearly with increased reciprocal output power which can be explained using a modified Schawlow-Townes theory. A power-independent broadening of the linewidth was also observed and has been explained as due to refractive index fluctuations resulting from statistical fluctuations in the number of conduction electrons in the small active volume of the devices studied. The range of linewidths for these devices can severely limit the utility of semiconductor lasers in various applications such as frequency standards, heterodyne communications, and fiber optical sensors. Significant performance improvements have been made by operating these devices in a stable external cavity.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 5509457
• Report Number(s): AD-P-001542/0
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LEPTONS
LINE BROADENING
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
STABILIZATION