Fundamental line broadening of single-mode (GaAl)As diode lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
The spectral width of (GaAl)As cw single-mode diode lasers varied linearly with reciprocal output power at 300 K with a slope 50 times greater than that predicted by the Schawlow-Townes expression without partial inversion. While the spectral narrowing observed at 77 K for constant mode power is consistent with the predicted temperature dependence of the partial inversion contribution, the magnitude of the broadening can not completely be attributed to partial inversion.
- Research Organization:
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
- OSTI ID:
- 6467569
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Frequency stability and control characteristics of (GaAl)as semiconductor lasers
Output power and temperature dependence of the linewidth of single-frequency cw (GaAl)As diode lasers
Observation of linewidth broadening in (GaAl)As diode lasers due to electron number fluctuations
Technical Report
·
Thu Dec 31 23:00:00 EST 1981
·
OSTI ID:5509457
Output power and temperature dependence of the linewidth of single-frequency cw (GaAl)As diode lasers
Journal Article
·
Sat May 15 00:00:00 EDT 1982
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5610437
Observation of linewidth broadening in (GaAl)As diode lasers due to electron number fluctuations
Journal Article
·
Wed Mar 31 23:00:00 EST 1982
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5805872
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LINE WIDTHS
LOW TEMPERATURE
MEDIUM TEMPERATURE
NUMERICAL DATA
OSCILLATION MODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
TEMPERATURE DEPENDENCE
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LINE WIDTHS
LOW TEMPERATURE
MEDIUM TEMPERATURE
NUMERICAL DATA
OSCILLATION MODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
TEMPERATURE DEPENDENCE