Output power and temperature dependence of the linewidth of single-frequency cw (GaAl)As diode lasers

Journal Article · Sat May 15 04:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92945· OSTI ID:5610437

Welford, D; Mooradian, A

We report here the observation of a linear dependence of cw single-frequency (GaAl)As diode laser linewidth as a function of reciprocal output power at 77, 195, and 273 K. The observed data are explained in terms of spontaneous emission events and their related refractive index perturbations.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• OSTI ID: 5610437
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
DISTURBANCES
EXPERIMENTAL DATA
FREQUENCY SELECTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LINE WIDTHS
LOW TEMPERATURE
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
POWER
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE