Observation of linewidth broadening in (GaAl)As diode lasers due to electron number fluctuations

Journal Article · Thu Apr 01 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93179· OSTI ID:5805872

Welford, D; Mooradian, A

We report here the experimental observation of power-independent linewidth broadening of cw single-frequency (GaAl)As diode lasers. This phenomenon is attributed to refractive index fluctuations resulting from statistical fluctuations in the number of conduction electrons in the small active volume of the devices studied.

• Research Organization: Massachusetts Inst. of Technology, Lexington
• OSTI ID: 5805872
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRON DENSITY
ELECTRONS
ELEMENTARY PARTICLES
EXPERIMENTAL DATA
FERMIONS
FLUCTUATIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LEPTONS
LINE BROADENING
LINE WIDTHS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
VARIATIONS
VOLUME