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Improved charge collection of the buried p-i-n- a-Si:H radiation

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:6608802
; ; ; ; ; ;  [1];  [2]
  1. Lawrence Berkeley Lab., CA (USA)
  2. Xerox Palo Alto Research Center, Palo Alto, CA (US)
Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV {alpha} particles, the 5.7 {mu}m thick buried p-i-n detector with bias 300 V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures.
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6608802
Report Number(s):
CONF-900143--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Journal Volume: 37:2
Country of Publication:
United States
Language:
English