Field profile tailoring in a-Si:H radiation detectors
Conference
·
OSTI ID:7069674
- Lawrence Berkeley Lab., CA (USA)
- Xerox Palo Alto Research Center, CA (USA)
The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 7069674
- Report Number(s):
- LBL-28681; CONF-900466--2; ON: DE90009208
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTRODES
ELEMENTS
FABRICATION
FLUIDS
FREQUENCY ANALYSIS
GASES
HYDROGEN
ILLUMINANCE
LAYERS
MATERIALS
MEASURING INSTRUMENTS
NOISE
NONMETALS
OPERATION
PERFORMANCE TESTING
PHYSICAL PROPERTIES
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
STRUCTURAL MODELS
TEMPERATURE EFFECTS
TESTING
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTRODES
ELEMENTS
FABRICATION
FLUIDS
FREQUENCY ANALYSIS
GASES
HYDROGEN
ILLUMINANCE
LAYERS
MATERIALS
MEASURING INSTRUMENTS
NOISE
NONMETALS
OPERATION
PERFORMANCE TESTING
PHYSICAL PROPERTIES
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
STRUCTURAL MODELS
TEMPERATURE EFFECTS
TESTING