Improved charge collection of the buried p-i-n a-Si:H radiation detectors

Conference · Fri Sep 01 04:00:00 EDT 1989

OSTI ID:5484536

Fujieda, I; Cho, G; Conti, M; Drewery, J; Kaplan, S N; Perez-Mendez, V; Qureshi, S; Street, R A ^[1]

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1. Lawrence Berkeley Lab., CA (USA)

Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV {alpha} particles, the 5.7 {mu}m thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5484536
• Report Number(s): LBL-27813; CONF-891087--10; ON: DE90002669
• Country of Publication: United States
• Language: English

Related Subjects

440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA PARTICLES
BREAKDOWN
CHARGE COLLECTION
CHARGED PARTICLES
MEASURING INSTRUMENTS
MODIFICATIONS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SI SEMICONDUCTOR DETECTORS