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Applications of a-Si:H radiation detectors

Conference ·
OSTI ID:6041235
Device structures and operation principles are described for detecting various kinds of radiation with hydrogenated amorphous silicon (a-Si:H) layers. With some new configurations such as the buried p-i-n structure and the use of interdigitated electrodes, the a-Si:H radiation detectors will find their applications in many fields of science. Some applications in high energy physics, medical imaging, materials sciences and life sciences are discussed in this paper. 41 refs., 7 figs., 1 tab.
Research Organization:
Lawrence Berkeley Lab., CA (USA)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6041235
Report Number(s):
LBL-27457; CONF-890861-1; ON: DE89015230
Country of Publication:
United States
Language:
English