High resolution amorphous silicon radiation detectors
Patent
·
OSTI ID:868313
- Palo Alto, CA
- El Cerrito, CA
- Berkeley, CA
A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Number(s):
- US 5117114
- OSTI ID:
- 868313
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
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40
a-si
adjacent
allows
amorphous
amorphous material
amorphous silicon
applied
array
arrays
atop
autoradiography
beam
bias
bias voltage
cameras
capacitance
cell
cells
column
columnar
comb
comb structure
confined
contiguous
conversion
converts
crystallography
detected
detection
detector
detector cell
detector element
detector employing
detectors
detects
determine
device
dimensional
dimensional array
directs
electrode
electrodes
element
embodiment
employing
employing amorphous
energy
energy conversion
energy physics
film
imaging
incident
incident radiation
independently
intercepts
interdigitated
interrogated
intrinsic
layer
layers
light
light beam
light energy
luminescent
luminescent material
material
medicine
medicine camera
nuclear
nuclear medicine
passage
passage therethrough
percent
physics
positioned
positioned proximate
proximate
radiation
radiation detector
radiation detectors
radiation energy
ray imaging
read-out
reduction
replaced
resolution
responsive
scanning
signal
silicon
silicon cell
silicon cells
silicon radiation
structure
teeth
therethrough
tracking
type
voltage
wavelength
x-ray
x-ray imaging
40
a-si
adjacent
allows
amorphous
amorphous material
amorphous silicon
applied
array
arrays
atop
autoradiography
beam
bias
bias voltage
cameras
capacitance
cell
cells
column
columnar
comb
comb structure
confined
contiguous
conversion
converts
crystallography
detected
detection
detector
detector cell
detector element
detector employing
detectors
detects
determine
device
dimensional
dimensional array
directs
electrode
electrodes
element
embodiment
employing
employing amorphous
energy
energy conversion
energy physics
film
imaging
incident
incident radiation
independently
intercepts
interdigitated
interrogated
intrinsic
layer
layers
light
light beam
light energy
luminescent
luminescent material
material
medicine
medicine camera
nuclear
nuclear medicine
passage
passage therethrough
percent
physics
positioned
positioned proximate
proximate
radiation
radiation detector
radiation detectors
radiation energy
ray imaging
read-out
reduction
replaced
resolution
responsive
scanning
signal
silicon
silicon cell
silicon cells
silicon radiation
structure
teeth
therethrough
tracking
type
voltage
wavelength
x-ray
x-ray imaging