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Preparation of a-Si:H films and devices in the Interdigital-Vertical-Electrode Deposition Apparatus

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6070845
A new a-Si:H film deposition apparatus named ''Interdigital-Vertical-Electrode Deposition Apparatus'' has been developed to achieve a high production throughput of a-Si:H devices. In the IVE apparatus, since vertically positioned several rf electrodes and grounded electrodes are arranged interdigitally, the number of discharging section for the deposition can be increased. The a-Si:H films prepared in the IVE apparatus have been evaluated in terms of the film thickness uniformity and electrical and optical properties. It has been confirmed that the IVE apparatus is suitable for fabricating a-Si:H devices with large cell area. The conversion efficiency obtained in glass substrate a-Si:H solar cells was 9.2% and 8.0% for cells with an area of 1 cm/sup 2/ and 100 cm/sup 2/, respectively.
Research Organization:
Fuji Electric Corporate Research and Development Ltd., 2-2-1 Nagasaka, Yokosuka, Kanagawa
OSTI ID:
6070845
Report Number(s):
CONF-840561-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English