Preparation of triple junction a-Si:H nip based solar cells at deposition rates of 10{angstrom}/s using a very high frequency technique
In an effort to find an alternative deposition method to the standard low deposition rate 13.56 MHz PECVD technique, the feasibility of using a 70 MHz rf plasma frequency to prepare a-Si:H based i-layer materials at high rates for nip based triple-junction solar cells has been tested. As a prelude to multi-junction cell fabrication, the deposition conditions used to make single-junction a-Si:H and a-SiGe:H cells using this Very High Frequency (VHF) method have been varied to optimize the material quality and the cell efficiencies. It was found that the efficiencies and the light stability for both a-Si:H and a-SiGe:H single-junction cells remain relatively constant as the i-layer deposition rate is varied from 1 to 10 {angstrom}/s. Also these stable efficiencies are similar to those for cells made at low deposition rates (1 {angstrom}/s) using the standard 13.56 MHz PECVD technique and the same deposition equipment. Using the knowledge obtained in the fabrication of the single-junction devices, a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar cells have been fabricated with all of the i-layers prepared using the VHF technique and deposition rates near 10 {angstrom}/s. Thin doped layers for these devices were prepared using the standard 13.56 MHz rf frequency and deposition rates near 1 {angstrom}/s. Pre-light soaked efficiencies of greater than 10% have been obtained for these cells prepared at the high rates. In addition, after 600 hrs. of light soaking under white light conditions, the cell efficiencies degraded by only 10--13%, values similar to the degree of degradation for high efficiency triple-junction cells made by the standard 13.56 MHz method using i-layer deposition rates near 1 {angstrom}/s. Thus, use of this VHF method in the production of large area a-Si:H based multi-junction solar modules will allow for higher i-layer deposition rates, higher module throughput and reduced module cost.
- Research Organization:
- Energy Conversion Devices, Inc., Troy, MI (US)
- Sponsoring Organization:
- National Renewable Energy Laboratory
- OSTI ID:
- 20107896
- Resource Relation:
- Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/09/1999; Other Information: PBD: 1999; Related Information: In: Amorphous and heterogeneous silicon thin films: Fundamentals to devices -- 1999. Materials Research Society symposium proceedings: Volume 557, by Branz, H.M.; Collins, R.W.; Okamoto, Hiroaki; Guha, S.; Schropp, R. [eds.], 908 pages.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Use of very-high-frequency plasmas to prepare a-Si:H-based triple-junction solar cells at high deposition rates: Annual technical status report, 11 March 1998--11 March 1999
Use of gas jet deposition technique to prepare a-Si:H solar cells