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Influence of thin metal as a top electrode on the characteristics of P-I-N a- Si:H solar cells

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.329057· OSTI ID:6602848

Hydrogenated amorphous silicon (a-Si:H) p-n junction solar cells have been fabricated which utilize various metals (Cr, Cu, Al, Pd, Ag) as a top electrode. Experimental and theoretical analysis of photovolatic performance in a-Si:H solar cells as a function of resistivity, optical transmittance, and work function of thin metal films are presented. Metal work function changes the effective built-in potential of p-n junction diodes. Furthermore, a lower work function metal forms a good Ohmic contact for substrate --P/sup +/-I-N/sup +/-- electrode cells, and high work function metals improve V/sub oc/ of substrate -N-I-P cells. Typical V/sub o/c values are 760 mV with Cr--, Cu--, and Al--N-I-P--stainless steel (SS), 700 mV with Pd--N-I-P-SS, 600 mV with Pd--P-I-N-SS, and 540 mV with Cr--P-I-N-SS. J/sub sc/ is strongly dependent on transmittance and resistivity of the metal films. Fill factor is independent of the choice of a top electrode. An efficient of 2% has been obtained on a 2 cm/sup 2/ solar cell.

Research Organization:
Department of Electrical Engineering, State University of New York at Buffalo, Amherst, New York 14221
OSTI ID:
6602848
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:4; ISSN JAPIA
Country of Publication:
United States
Language:
English