Effect of metal/P-doped a-Si:H junctions on the photovoltage of a-Si:H solar cells

Journal Article · Thu Oct 15 04:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339306· OSTI ID:6052050

Sakai, Y; Matsumura, M; Nakato, Y; Tsubomura, H

The open-circuit photovoltages (V/sub oc/) of a-Si:H solar cells having a Glass/TCO/p-i-n a-Si:H/metal structure were examined as a function of the thickness of the n layer. The V/sub oc/ stayed constant at --0.8 V, irrespective of the kind of metals, as far as the thickness of the n layer was larger than 15 nm, but dropped when the n layer got thinner. This effect was the stronger, the smaller the work function of the metal. The decrease of V/sub oc/ is attributed to complete depletion of the n layer, leading to the reduction of the potential gradient in the i layer. The effects of the metal/P-doped a-Si:H junction were further investigated using cells having a Glass/TCO/n-i-n/metal structure and different doping concentrations for the latter n layer. The results obtained supported the above-mentioned conclusion.

• Research Organization: Laboratory for Chemical Conversion of Solar Energy and Department of Chemistry, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
• OSTI ID: 6052050
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DOPING
DATA
DIMENSIONS
DIRECT ENERGY CONVERTERS
EQUIPMENT
EXPERIMENTAL DATA
GLASS
INFORMATION
JUNCTIONS
LAYERS
NUMERICAL DATA
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
THICKNESS