Real time spectroscopic ellipsometry studies of the top junctions of a-Si:H-based solar cells
- Pennsylvania State Univ., University Park, PA (United States)
The authors have applied real time spectroscopic ellipsometry (RTSE) to characterize the top junctions in p-i-n and n-i-p a-Si:H solar cells in which the structure, composition, and optical gaps of thin layers (5--200 {angstrom}) near the p/i and i/p interfaces are varied in efforts to optimize the open circuit voltage (V{sub oc}). For the p-i-n configuration, RTSE studies have led to a two step cell fabrication design in which a 200 {angstrom} a-Si:H layer of high H{sub 2}-dilution very close to the amorphous-to-crystalline boundary is deposited on the p-layer first, followed by a thick (4000 {angstrom}) i-layer of lower H{sub 2}-dilution. For the n-i-p configuration, compositional and optical gap profiling of C-graded i/p interface layers with monolayer resolution was also demonstrated using RTSE. In both studies, the authors have correlated interface layer characteristics with V{sub oc}.
- Sponsoring Organization:
- National Renewable Energy Lab., Golden, CO (United States); National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 304329
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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