Material basis of highly stable a-Si:H solar cells
- Forschungszentrum Juelich (Germany). Inst. fuer Schicht- und Ionentechnik
The authors achieved a stabilized efficiency of 9.2% after only 8% relative degradation for an a-Si:H/A-Si:H stacked cell with the top-cell i-layer prepared at 140 C using a high hydrogen dilution of the silane process gas. From a comprehensive characterization of p-i-n cells and the corresponding i-layer material prepared at 140 C and 190 C substrate temperature with different hydrogen dilutions, the authors conclude that the performance of these pin cells strongly correlates with the material properties of the corresponding i-layers. High fill factors after light soaking are reflected in a good microstructure, high photo-conductivity, and relatively low defect density. Whereas the initial V{sub oc} is limited by interface recombination, volume recombination dominates the forward-dark current after light soaking. The stabilized V{sub oc} as well as the short-circuit current densities correlate with the optical bandgap of the i-layer.
- OSTI ID:
- 527612
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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