The effects of hydrogen dilution on Voc in a-Si:H pin solar cells

Conference · Tue Jul 01 04:00:00 EDT 1997

OSTI ID:20085560

Wang, Q; Crandall, R S; Han, D

The authors study the effects of hydrogen dilution on the open circuit voltage of a-Si:H pin solar cells fabricated by rf glow discharge growth. They keep the p and n layers the same and only vary the i-layer properties. A normal a-Si:H i-layer, an H-diluted i-layer, and a thin H-diluted layer inserted between p and normal i layer are selected for this study. They measure the JV characteristics and the internal electric field distribution using a transient-null-current technique both in annealed and light soaked states. They find that hydrogen dilution does stabilize the Voc either in a bulk H-diluted i layer or in a thin layer between p and normal i layer after 100 hours Am1 sun light soaking. From dark IV measurement, both H-diluted cells show little change in current at voltage near Voc before and after light soaking; while the normal a-Si:H cell does show a noticeable change. Also the internal field measurements find a stronger electric field starting from p and i interface for both H-diluted cells compared to the normal a-Si:H cell. Furthermore, there are no measurable changes in the field profiles after 100 hour AM1 light-soaking for both H-diluted and normal a-Si cells. All these suggest that hydrogen dilution increases the field strength near p and i interface, which is the key that leads to a more stable Voc of H-diluted cells.

• Research Organization: National Renewable Energy Lab., Golden, CO (US)
• Sponsoring Organization: US Department of Energy
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 20085560
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
AMORPHOUS STATE
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
HYDROGEN ADDITIONS
ILLUMINANCE
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS