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The effect of hydrogen dilution near the p/i interface region of a-Si:H p-i-n solar cells

Book ·
OSTI ID:527617
;  [1]; ;  [2]
  1. Univ. of North Carolina, Chapel Hill, NC (United States). Dept. of Physics and Astronomy
  2. National Renewable Energy Lab., Golden, CO (United States)
It is known that the a-Si:H solar cell with H-diluted i-layer (p-i{sub H}-n) exhibits a better stability under AM1 light solar cell when inserting a thin H-diluted i-layer between the p- and the i-layer (p-i{sub H}-i-n) shows the same stability as a p-e{sub H}-n solar cell after 600 hours light soaking. It was suggested that the stabilization of a H-diluted a-Si:H solar cell is through controlling its p/i interface. In this work, the authors report the electroluminescence (EL) measurements of a-Si:H solar cells with p-i{sub H}-n, p-i{sub H}-i-n and p-i-n structures made in identical conditions except the difference in H-dilution processing. EL spectra in a wide range of temperature indicate that the defect-band emission can be controlled through a thin H-diluted i-layer near the p/i interface region, but the main-band emission depends more on the diluted i-layer thickness. According to the temperature dependence of the EL efficiency, the valence band-tail width of the active layer in the p-i{sub H}-i-n cell is estimated to be about 13% broader than that in the p-i{sub H}-n cell. From the total EL intensity as a function of the forward current density, the recombination processes at room temperature are suggested to be a monomolecular type for p-i{sub H}-n, p-i{sub H}-i-n, and p-i-n structures.
Sponsoring Organization:
National Renewable Energy Lab., Golden, CO (United States); USDOE, Washington, DC (United States)
OSTI ID:
527617
Report Number(s):
CONF-960401--; ISBN 1-55899-323-1
Country of Publication:
United States
Language:
English