Improvement in stabilized efficiency of a-Si:H solar cells through optimized p/i-interface layers

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208105

Rech, B; Beneking, C; Wagner, H ^[1]

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1. Forschungszentrum Juelich GmbH (Germany)

This paper focuses on the relation between p/i-interface layer properties and the light stability of the corresponding solar cells. In a series of cells containing different p/i-interface structures large differences in relative degradation were found. These differences are explained by a redistribution of the electric field due to the insertion of different p/i-interface layers leading to different collection from the i-layer volume in the course of i-layer degradation. Based on this hypothesis, the authors developed an optimized design of the p/i-interface region, which increases the initial efficiency without introducing additional degradation. a-Si:H/a-Si:H stacked cells including this new design exhibit only 12% degradation after 300 hours of one sun light-soaking. A stabilized efficiency of 9% was achieved.

• OSTI ID: 208105
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
AMORPHOUS STATE
BACK CONTACT SOLAR CELLS
CHEMICAL VAPOR DEPOSITION
DESIGN
EFFICIENCY
ELECTRIC POTENTIAL
EXPERIMENTAL DATA
FILL FACTORS
INTERFACES
PHOTOCONDUCTIVITY
SILICON CARBIDES
SILICON SOLAR CELLS
STABILITY
TIN OXIDES
ZINC OXIDES