Use of a carbon-alloyed graded-band-gap layer at the p/i interface to improve the photocharacteristics of amorphous silicon alloyed p-i-n solar cells prepared by photochemical vapor deposition

Journal Article · Wed Apr 15 04:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337806· OSTI ID:6886788

Kim, W Y; Tasaki, H; Konagai, M; Takahashi, K

Amorphous silicon alloyed p-i-n solar cells have been fabricated using a separate chamber photochemical vapor deposition system. The photocharacteristics of such cells have been modestly improved by the addition of a carbon-alloyed graded-band-gap layer at the p(a-SiC:H)/i(a-Si:H) heterointerface. The best efficiency obtained for a glass/TCO (transparent conductive oxide)/p(a-SiC:H)/i(a-Si:H)/n(..mu..c-Si:H)/metal structure of this type was 11.2% for a 3 x 3 mm/sup 2/ cell; other parameters were V/sub oc/ = 0.882 V, I/sub sc/ = 18.05 mA/cm/sup 2/, and a fill factor (FF) of 0.702.

• Research Organization: Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguroku, Tokyo 152, Japan
• OSTI ID: 6886788
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
FABRICATION
GLASS
HETEROJUNCTIONS
JUNCTIONS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING