Transparent conducting oxide contacts for n-i-p and p-i-n amorphous silicon solar cells
- University of Center of Excellence, For Photovoltaic Research and Education
We investigate the effect of sputtered transparent conducting oxide (TCO) contacts on the device performance of ss/n-i-p/TCO and glass/SnO {sub 2}/p-i-n/TCO/Ag solar cells. TCO materials ITO and ZnO are compared, and found to have very similar transparency at the same sheet resistance. Sputtering ZnO with O{sub 2} in the Ar reduces FF for ss/n-i-p/ZnO devices, compared to sputtering without O{sub 2}. This is attributed to an interface not bulk effect. Sputtering ITO with O{sub 2} on the same devices increases J{sub SC} due to higher ITO transparency, compared to sputtering without O{sub 2} , but has no effect on FF. Based on curvature in the J(V) curve around V{sub OC}, the ZnO/p layer contact appears to be non-ohmic. For p-i-n/TCO/Ag devices, {mu}c-Si n-layers have much higher V{sub OC}, J{sub SC}, and FF for all variations of TCO/Ag back reflectors compared to an a-Si n-layer. Devices with ITO/Ag have lower V{sub OC} and J{sub SC} compared to devices with ZnO/Ag. Sputtering ZnO with O{sub 2} has no detrimental effect on devices with {mu}c-Si n-layers but severely reduces FF in devices with a-Si n-layers. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 552855
- Report Number(s):
- CONF-961178--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 394; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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