Improving performance of superstrate p-i-n a-Si solar cells by optimization of n/TCO/metal back contacts
Book
·
OSTI ID:304330
- Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion
A comprehensive study of the n-layer and back contact for superstrate (glass/textured SnO{sub 2}/p-i-n/TCO/metal) a-Si solar cells is presented. In particular, the difference between a-Si and {micro}c-Si n-layers are compared. These results show that the efficiency can be improved from 7% to 10% (absolute) by optimizing the back contact layers to incorporate a good optical back reflector. A rectifying contact is formed between the TCO and a-Si n-layer which reduces FF. A {micro}c-Si n-layer eliminates the blocking n/TCO contact. Results suggest that the n/TCO interface has a controlling influence. ZnO gives {approximately}1 mA/cm{sup 2} higher J{sub sc} compared to ITO. The best contacts are {micro}c-Si/ZnO/metal.
- Sponsoring Organization:
- National Renewable Energy Lab., Golden, CO (United States)
- OSTI ID:
- 304330
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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