Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells

Conference · Tue Dec 30 23:00:00 EST 1997

OSTI ID:304334

Rech, B; Wieder, S; Beneking, C; Loeffl, A; Kluth, O; Reetz, W; Wagner, H ^[1]

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1. Forschungszentrum Juelich (Germany)

This paper treats the use of texture etched ZnO:Al films in amorphous silicon solar cells. Chemically textured ZnO:Al films were implemented as a front TCO in p-i-n (superstrate) and n-i-p (substrate) solar cells, and in combination with Ag as a textured back reflector in n-i-p (substrate) solar cells. These cells exhibit excellent optical and light-trapping properties demonstrated by high short-circuit current densities. Adapted microcrystalline p-layers solve the ZnO/p-contact problem and thereby provide high fill factors and open-circuit voltages. The initial efficiencies so far obtained are close to 10% for p-i-n and 8% for n-i-p solar cells.

• OSTI ID: 304334
• Report Number(s): CONF-970953--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ALUMINIUM
CURRENT DENSITY
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
FILL FACTORS
PERFORMANCE
QUANTUM EFFICIENCY
REFLECTIVE COATINGS
SILICON SOLAR CELLS
ZINC OXIDES