Solution of the ZnO/p contact problem in a-Si:H solar cells
Conference
·
OSTI ID:208112
- Research Centre Juelich (Germany)
This paper addresses the problem of preparing a good p-layer contact with zinc oxide as TCO. The approach was to deposit pin cells with different p-layer recipes on ZnO coated SnO{sub 2}:F and on uncoated SnO{sub 2}:F in one run. The pin cells prepared on the ZnO surface exhibit a lower fill factor (FF). The experiments demonstrate that the hydrogen interaction with the ZnO surface plays the most decisive role for the ZnO/p contact. The authors explain the observed effects using a band diagram of the ZnO/p interface and show that the accumulation layer at the ZnO surface--caused by atomic hydrogen in the plasma--is responsible for the low FF in pin cells. Based on this model the contact problem is solved by introducing a {micro}c-n-Si intralayer between ZnO nd p layer resulting in an identical high FF on both ZnO and SnO{sub 2} substrates.
- OSTI ID:
- 208112
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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