The role of buffer layer between TCO and p-layer in improving series resistance and carrier recombination of a-Si:H solar cells
Journal Article
·
· Materials Research Bulletin
- School of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746 (Korea, Republic of)
- Department of Energy Science, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746 (Korea, Republic of)
The properties of the window layer and transparent conducting oxide (TCO)/p interface in silicon based thin-film solar cells are important factors in determining the cell efficiency. As the potential barrier got larger at the interface, the transmission of photo-generated holes were impeded and the recombination of photo-generated electrons diffusing back toward the TCO interface were enhanced leading to a deterioration of the fill factor. In this paper different p-layers were studied. It was found that using p-type hydrogenated amorphous silicon oxide (a-SiO{sub x}:H) layer as the window layer along with a 5 nm buffer layer which reduced the barrier at the fluorine doped tin oxide (SnO{sub 2}:F) TCO/p-layer interface, improved the cell efficiency. a-SiO{sub x}:H was used as the buffer layer. With the buffer layer between TCO and p-type a-SiO{sub x}:H, the potential barrier dropped from 0.506 eV to 0.472 eV. This lowered barrier results in increased short circuit current density (J{sub sc}) and fill factor (FF). With the buffer layer, J{sub sc} increased from 11.9 mA/cm{sup 2} to 13.35 mA/cm{sup 2} and FF increased from 73.22% to 74.91%.
- OSTI ID:
- 22215534
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 10 Vol. 47; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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