Correlation between TCO/p and p/i heterojunction and effect of n/TCO heterojunction on a-Si:H solar cell performance

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208111

Smole, F; Topic, M; Furlan, J ^[1]

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1. Univ. of Ljubljana (Slovenia). Faculty of Electrical and Computer Engineering

The influence of front TCO/p(A-Si:C:H) heterojunction in correlation with p(a-Si:C:H)/i(A-Si:H) heterojunction on TCO/p-i-n/TCO/metal a-Si:H solar cell performance is examined using the ASPIN computer simulator. The results indicate that defect states at both heterojunctions affect the potential barrier profile at the TCO/p heterojunction, and that their increase lowers the free hole concentration in the p-layer. However, defect states at the p/i interface change the potential distribution in the i-layer more strongly, and hence also photoelectric properties. At the improved TCO/metal back contact, the effect of n(a-Si:H)/TCO heterojunction on the electrical properties is also examined. The analysis of n(A-Si:H)/TCO structures shows that the best electrical properties can be achieved with ZnO, which enables the reduction of the n-layer thickness, resulting in further enhanced quantum efficiency and short-circuit current.

• OSTI ID: 208111
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
AMORPHOUS STATE
COMPUTERIZED SIMULATION
CORRELATIONS
CRYSTAL DEFECTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
HETEROJUNCTIONS
PERFORMANCE
SILICON CARBIDES
SILICON SOLAR CELLS
ZINC OXIDES