Examination of 1-D position sensitive detector performance through analysis of front contact heterojunction
Book
·
OSTI ID:527630
- Univ. of Ljubljana (Slovenia). Faculty of Electrical Engineering
- New Univ. of Lisbon and CEMOP-UNINOVA, Monte de Caparica (Portugal)
The influence of different TCOs (SnO{sub 2} and ITO) on the photoelectrical properties of 1-D position sensitive detectors based on p-i-n structures was studied. A strong cross-contamination in the p-layer and contamination in the i-layer reduce the quality of the device. Numerical analysis of TCO/p-i-n structure also revealed a strong increase in defect states at the p-layer surface which can be attributed to the reduction of TCO. ITO seems to be less appropriate for a front TCO, although the spectral response of the p-i-n structure under reverse bias is not significantly affected by the conditions at the TCO/p heterojunction.
- OSTI ID:
- 527630
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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