Development and application of low temperature RF magnetron sputtered ITO thin films for a-Si:H based p/i/n junction solar cells
- ENEA-Centro Ricerche, Portici (Italy)
- Anna Univ., Madras (India)
This paper reports on the optimization of ITO films deposited by RF magnetron sputtering method from In{sub 2}O{sub 3}/SnO{sub 2} target. In view of the application of this transparent conductive oxide as top layer in amorphous and a-Si/c-Si heterojunction solar cells, low temperature and low sputtering power have been selected in order to avoid damages of underlying device. Transition of ITO from amorphous to mixed amorphous/crystalline phase has been observed at room temperature with increasing deposition power. Low resistivity amorphous oxide layers (2.8 {center_dot} 10{sup {minus}4} {Omega} {center_dot} cm) have been achieved at low RF power density. Optical transmittance of this film stays above 82% in the visible range. a-Si:H p-i-n and a-Si/c-Si heterojunction solar cells with 9.4% and 14.5% efficiency respectively have been realized with this ITO as top electrode, after device thermal annealing at 150 C.
- OSTI ID:
- 304346
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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