Efficient electron-beam-deposited ITO/n-Si solar cells

Journal Article · Sun Jul 01 00:00:00 EDT 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325574· OSTI ID:6241817

Feng, T; Ghosh, A K; Fishman, C

Indium tin oxide/silicon heterojunction solar cells with power conversion efficiencies of 10% in AM1 solar spectrum were fabricated. The indium tin oxide (ITO) films were deposited onto n-type silicon by electron-beam evaporation of a mixture of 90 : 10 molar% In/sub 2/O/sub 3/ : SnO/sub 2/ powder. As in SnO/sub 2//n-Si cells, the efficiencies of these cells depend upon the angle of incidence of the ITO vapor stream to silicon. We have found the photovoltaic properties of these cells to be very similar to those of SnO/sub 2//n-Si devices.

• Research Organization: Exxon Research and Engineering Company, Linden, New Jersey 07036
• OSTI ID: 6241817
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BEAMS
CHALCOGENIDES
DEPOSITION
DIRECT ENERGY CONVERTERS
DISPERSIONS
EFFICIENCY
ELECTRON BEAMS
ELEMENTS
FABRICATION
INDIUM
JUNCTIONS
LEPTON BEAMS
METALS
MIXTURES
N-TYPE CONDUCTORS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SOLAR CELLS
SPECTRA
TIN