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A 10% efficient ITO-CdTe heterojunction solar cell

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5495213

ITO/CdTe heterojunctions have been formed by electron beam evaporation of indium-tin-oxide (ITO) onto single crystal /rho/-type CdTe and onto close-spaced-vapor-transport (CSVT) CdTe films deposited on single crystal /rho/-type CdTe. Solar efficiencies of 10.5% referred to active area V /SUB oc/ = 0.81 V, J /SUB sc/ = 20 mA/cm/sup 2/) have been realized with junctions on single crystal CdTe. These heterojunctions have been stable for 10 months. The exploratory ITO//rho/-CdTe(CSVT)//rho/-CdTe(single crystal) heterojunctions show V /SUB oc/ = 0.46 V, J /SUB sc/ = 20.0 mA/cm/sup 2/ and a solar efficiency of 5.5%.

Research Organization:
Department of Materials Science and Engineering, Stanford University, Stanford, California
OSTI ID:
5495213
Report Number(s):
CONF-820906-
Journal Information:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
Country of Publication:
United States
Language:
English