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High efficiency large area SnO/sub 2//n-Si and ITO/n-Si Heterojunction solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5391037
Optimization of the spray-deposition process, metal-grid pattern, and AR properties of SnO/sub 2/ and ITO films have yielded high efficiency SnO/sub 2//n-Si and ITO/n-Si cells. An efficiency of 14.6% has been achieved for a 4.2 cm/sup 2/ ITO/n-Si cell. And for large area (20 cm/sup 2/) cells the authors have obtained efficiencies of 13.6% and 13.8% for SnO/sub 2//n-Si and ITO/n-Si cells, respectively. High efficiency modules consisting of 2-inch diameter cells connected in series were made and shown to be compatible with the standard EVA encapsulation process used for p-n junction silicon cells. The authors have found that the UV-induced degradation in V/SUB oc/ can be restored by low temperature annealing. Many UV light absorbing material placed in front of the cells can eliminate degradation. In particular, SnO/sub 2//n-Si and ITO/n-Si cells encapsulated in EVA do not show any decrease in V/SUB oc/ and efficiency over an extended period of sunlight exposure.
Research Organization:
Exxon Research and Engineering Co., Linden, NJ
OSTI ID:
5391037
Report Number(s):
CONF-820906-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English