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A-Si:H solar cell with low-resistance series connection by metal diffusion

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.343329· OSTI ID:6184938
Evaporated Al and Cu films were studied as metal diffusion sources for series connection between hydrogenated amorphous silicon p-i-n photodiodes. The Al or Cu film was deposited onto selected areas of the front electrodes of the glass substrate. The Al and the Cu diffused through the amorphous silicon films, during their depositions, at substrate temperatures as low as 150 /sup 0/C. In this way, we produced a new type of a-Si:H solar cell, series-connected by the Al or Cu diffusion, having 10% efficiency under 100 mW/cm/sup 2/ AM1 radiation. The electrical power losses of this series connection has remained negligible over a 5-year period.
Research Organization:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570, Japan
OSTI ID:
6184938
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:10; ISSN JAPIA
Country of Publication:
United States
Language:
English