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U.S. Department of Energy
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Research on high-efficiency single-junction monolithic thin-film amorphous silicon solar cells. Semiannual report 1 February 1984-31 July 1984

Technical Report ·
OSTI ID:5845342

The research program reported here consisted of five tasks. In the Amorphous Silicon Materials Research Task, doped and undoped a-Si:H materials were grown in glow-discharge deposition systems. Disiloxane was contaminating some silane cylinders, and a-Si:H films have had impurity contents of 10/sup 19/ cm/sup -3/. Undoped a-Si:H film diffusion lengths have been approx. 0.5 ..mu..m. In the Nonsemiconductor Materials Research Task, textured tin-oxide coated glass was used. P-I-N solar cells were produced with n-layers having both Al and Ti/Al back contacts. In the Solar Cell Research Task, p-i-n cells were fabricated with conversion efficiencies around 8 to 9% (1.14-cm/sup 2/ areas). Substrates were tin oxide on pyrex glass. In the Monolithic, Intraconnected Cells/Submodule Research Task, a submodule was designed with two parallel arrays of 35 series-connected cells on 12'' by 13'' substrates. A Solarex scribing system was used to pattern both tin oxide and a-Si:H over areas up to 1000 cm/sup 2/. In the Multichamber Deposition System Task, a multichamber system was designed having external heaters, heated rf electrodes, and gas curtains for dopant isolation. A Solarex multichamber deposition system has uniformly deposited a-Si:H over areas of 1000 cm/sup 2/.

Research Organization:
Solarex Corp., Newtown, PA (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5845342
Report Number(s):
SERI/STR-211-2610; ON: DE85008773
Country of Publication:
United States
Language:
English