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U.S. Department of Energy
Office of Scientific and Technical Information

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Final technical report, February 1987

Technical Report ·
OSTI ID:6833395

This report describes research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells in five task areas: a-Si materials; nonsemiconductor materials; a-Si solar cells; monolithic, intraconnected cells and submodules; and multichamber deposition systems. Among many results, researchers found that good film properties can be obtained at a deposition rate of 8 A/s using a 33% silane-in-hydrogen mixture; low-level phosphorous-doped a-Si:H films exhibit no detectable degradation with light soaking; and the p-window structure appears to be more stable than the n-window structure. The performance of such top contacts as SnO/sub 2//ITO, Ag/ITO, and SnO/sub 2//Ag/SnO/sub 2/ was compared with that of single-layer ITO. A new web treatment system for a-Si solar cells was developed that reduces contamination from the web. Submodules with active areas of more than 70 cm/sup 2/ were produced with active-area efficiencies of more than 4%. The fabrication technique involved laser scribing, screen printing, vapor deposition, and laser heat treatments. A multichamber deposition system was also designed and constructed that deposited a-Si p-i-n and n-i-p layers on a flexible polyimide web in a continuous, roll-to-roll deposition process. 11 refs., 55 figs., 4 tabs.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Minnesota Mining and Mfg. Co., St. Paul (USA). Electronic and Information Sector Labs.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6833395
Report Number(s):
SERI/STR-211-3344; ON: DE88001177
Country of Publication:
United States
Language:
English