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U.S. Department of Energy
Office of Scientific and Technical Information

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Semiannual subcontract report No. 3, 1 December 1985--31 May 1986

Technical Report ·
OSTI ID:7229105

This report describes progress in research on high-efficiency, single-junction into five lithic, thin-film amorphous silicon solar cells. The work was divided into five tasks, which include research on a-Si materials; nonsemiconductor materials; web growth; and monolithic, intraconnected cells and submodules. Also described is work done with a multichamber deposition system. Results included achieving an optical band gap of 1.73-1.75 eV in the intrinsic i-layer. A new roll coater was acquired for use as a multilayer transparent top-contact deposition system. Textured substrates were also investigated to increase the short-circuit current. In doping profile work, a model indicated that a carbon profile could be used in place of the boron profile to raise the open-circuit voltage. Silver-filled epoxy-ITO contacts were found to be unstable over time. Two-web growth methods were demonstrated to obtain submodule performance that is about 80% of small-area (1 cm /sup 2/) efficiency. With the multichamber deposition system, a-Si p-i-n layers were deposited onto metallized polyimide web in a continuous, roll-to-roll process. 11 refs., 36 figs., 2 tabs.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Minnesota Mining and Mfg. Co., St. Paul (USA). Electronic and Information Sector Labs.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
7229105
Report Number(s):
SERI/STR-211-3343; ON: DE88001176
Country of Publication:
United States
Language:
English