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X-ray charged particle detection with CsI(Tl) layer coupled to a Si:H photodiode layers

Journal Article · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/23.289306· OSTI ID:5090419
;  [1]; ; ; ; ; ; ;  [2]
  1. Xerox Palo Alto Research Center, CA (United States)
  2. Lawrence Berkeley Lab., CA (United States)
This paper reports on a compact real-time X-ray and charged particle imager with digitized position output built either by coupling a fast scintillator to a photodiode array or by forming one on a photodiode array directly. CsI(T1) layers 100-1000 {mu}m thick were evaporated on glass substrates from a crystal CsI(T1). When coupled to a crystalline Si or amorphous silicon (a-Si:H) photodiode and exposed to calibrated X-ray pulses, their light yields and speed were found to be comparable to those of a crystal CsI(T1). Single {beta} particle detection was demonstrated with this combination. The light spread inside evaporated CsI(T1) was suppressed by its columnar structure. Scintillation detection gives much larger signals than direct X-ray detection due to the increased energy deposition in the detector material. Fabrication of monolithic type X-ray sensors consisting of CsI + a-Si:H photodiodes is discussed.
DOE Contract Number:
AC03-76SF00098
OSTI ID:
5090419
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:2; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English