Fabrication and testing of mis solar cells on a-Si:F:H. Final report, September 15, 1979-September 15, 1980
Fabrication techniques and improved a-Si:H film processing have been achieved to produce a short circuit current density of 7.5 mA/cm/sup 2/ and open circuit voltage of 740 mV on large area (2cm/sup 2/) a-Si cells by the deposition of an inexpensive semitransparent metal (Cr) as a top electrode on a N-I-P structure. This corresponds to a 2% efficiency using AMl illumination. A V/sub oc/ of 830 mV and fill factor of 0.54 have also been separately obtained. A relatively simple and inexpensive deposition technique using a one pumpdown vacuum system, Al grid and thin metal film structure have been applied to reduce the cost of a-Si:H cell fabrication. A SEM study of a-Si film quality shows the substrate texture to greatly influence the film morphology. This in turn serves to influence the uniformity of photovoltaic response on completed solar cells. The studies of optical transmittance of various thin metal films promote the utilization of Cr and Cu as a top electrode. Dark and illuminated I-V characteristics show that current conduction mechanisms and recombination pheonomena are not the same under dark and illuminated conditions. Furthermore, spectral response analysis and reverse illuminated saturation current under different illumination levels show photoconductivity and collection efficiency to be a function of illumination level. Significant differences in spectral response are observed when comparing P-I-N, N-I-P and I-N structures. A Schottky barrier lowering effect is proposed to explain some spectral response data. The importance of the top junction region to carrier collection is also discussed.
- Research Organization:
- State Univ. of New York, Buffalo (USA). Dept. of Electrical Engineering
- DOE Contract Number:
- AC02-77CH00178
- OSTI ID:
- 6747602
- Report Number(s):
- SERI/TR-8041-9-T1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
CHARGE COLLECTION
CHROMIUM
COPPER
CRYSTAL STRUCTURE
CURRENT DENSITY
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRODES
ELECTRON MICROSCOPY
ELEMENTS
ENERGY GAP
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
FILL FACTORS
FILMS
GRAPHS
INFORMATION
METALS
MICROSCOPY
MICROSTRUCTURE
MIS TRANSISTORS
MORPHOLOGY
NUMERICAL DATA
OPTICAL PROPERTIES
PERFORMANCE
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RECOMBINATION
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE
TRANSISTORS
TRANSITION ELEMENTS