Doping and transport studies in In/sub x/Ga/sub 1-x/As/GaAs strained-layer superlattices
High-quality In/sub x/Ga/sub 1-x/As/GaAs strained-layer superlattices (SLS's), with 0.11 less than or equal to x less than or equal to 0.20, have been grown by molecular-beam epitaxy. The test structures grown include the first doped material in this SLS system, with Si being used for n-type doping and Be for p-type. A number of structures with up to 80 superlattice periods and with layer thicknesses in the 40 to 140 A range have been characterized by x-ray diffraction and optical techniques. Doped specimens have been characterized by C-V profiling and, for diode structures, by I-V, four-terminal resistivity, and Hall-effect measurements. Hall mobilities (parallel to the layers) are comparable to those of high-quality bulk alloy material, further evidence of the high crystalline quality possible in multilayer structures with thin, highly-mismatched (> 1%) layers. 5 figures.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6598737
- Report Number(s):
- SAND-82-1847C; CONF-821219-1; ON: DE83003915
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
COHERENT SCATTERING
CRYSTAL DOPING
CRYSTAL STRUCTURE
DATA
DIFFRACTION
ELECTRICAL PROPERTIES
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LAYERS
MOBILITY
MOLECULAR BEAMS
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SUPERLATTICES
X-RAY DIFFRACTION