Doping and transport studies in In/sub x/Ga/sub 1-x/As/GaAs strained-layer superlattices
High quality In/sub x/Ga/sub 1-x/As/GaAs strained-layer superlattices (SLS's), with 0.11< or =x< or =0.20, have been grown by molecular beam epitaxy. The test structures grown include the first doped material in this SLS system, with Si being used for n-type doping and Be for p-type. A number of structures with up to 80 superlattice periods and with layer thicknesses in the 40--140 A range have been characterized by x-ray diffraction and optical techniques. Doped specimens have been characterized by C--V profiling and, for diode structures, by I--V, four-terminal resistivity, and Hall-effect measurements. Hall mobilities (parallel to the layers) at 23 /sup 0/C are comparable to those of high quality bulk alloy material, further evidence of the high crystalline quality possible in multilayer structures with thin, highly mismatched (>1%) layers.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico, 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5771225
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 1:2; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ALKALINE EARTH METALS
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM
CARRIER DENSITY
CARRIER MOBILITY
COHERENT SCATTERING
CRYSTAL DOPING
CRYSTAL STRUCTURE
CURRENTS
DIFFRACTION
DIMENSIONS
DOPED MATERIALS
ELECTRIC CONDUCTORS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELEMENTS
ENERGY SPECTRA
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MATERIALS
METALS
MOBILITY
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOCURRENTS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
SPECTRA
SUPERLATTICES
THICKNESS
X-RAY DIFFRACTION