Photoluminescence studies of Ga(As,P) strained-layer superlattices

Conference · Mon Aug 13 00:00:00 EDT 1984

OSTI ID:6596185

Gourley, P L

Strained-Layer Superlattices (SLS's) are semiconductor multilayers composed of thin (approx. 100 A) alternating layers of lattice-mismatched materials. The layers are thin enough that they coherently strain themselves to align atoms across the interfaces and avoid misfit dislocations. The layers are grown alternately in tension and compression to form thick (approx. 1 ..mu..m) structures. SLS's have been produced by both molecular beam epitaxy and metal-organic chemical vapor deposition (MOCVD) growth techniques. The high quality of these SLS structures has been verified by a number of materials characterization techniques. Because the SLS layers are thin, they possess the quantum size effects that have been extensively studied in superlattice and multiple quantum well structures composed of lattice-matched semiconductors. However, the SLS's have the additional freedom to combine lattice-mismatched materials, making available a much wider range in materials and electronic properties. Furthermore, these SLS's have the additional feature of a built-in strain which modifies energy band structure. These features allow SLS band structure to be engineered for a specific application. Recently, the first theoretical and experimental studies of Ga(As,P) SLS optical properties were reported. These SLS's include type I superlattices (GaAs/GaAs/sub x/P/sub 1-x/ - where the electrons and holes are localized in the GaAs layers) and type II superlattices (GaP/GaAs/sub x/P/sub 1-x/ where the electrons and holes are spatially separated). Such structures have been grown by MOCVD and studied with photoluminescence spectroscopy. These studies are briefly summarized. (WHK)

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6596185
• Report Number(s): SAND-84-0610C; CONF-840875-1; ON: DE84015709
• Resource Relation: Conference: International conference on luminescence, Madison, WI, USA, 13 Aug 1984
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
SUPERLATTICES
GALLIUM PHOSPHIDES
OPTICAL PROPERTIES
CHEMICAL VAPOR DEPOSITION
PHOTOLUMINESCENCE
STRAINS
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
FILMS
GALLIUM COMPOUNDS
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SURFACE COATING
360603* - Materials- Properties