GaAs/sub x/P/sub 1-x//GaP strained-layer superlattice

Journal Article · Thu Jul 15 04:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93450· OSTI ID:5264375

Osbourn, G C; Biefeld, R M; Gourley, P L

Strained-layer superlattices form a broad new class of semiconductor materials with tailorable electronic properties. We have succeeded in growing a GaAs/sub x/P/sub 1-x//GaP(100) strained-layer superlattice (SLS). The structure was grown by alternate metalorganic chemical vapor deposition of thin (60 A)layers (20 each) of GaAs0.4P0.6 and GaP. These layers were grown onto a GaAs/sub x/P/sub 1-x/ layer which was graded in composition from x = 0 (composition of underlying GaP substrate)to x = 0 (average composition of the SLS). Photoluminescense studies of the SLS were carried out to determine the optical band gap. At T = 78 K, the spectrum shows a dominant band-edge peak at 2.03 eV as well as weaker peaks at higher energies. Tight binding and effective mass calculations, also carried out, predict a direct band gap (due to zone folding) of 2.02 eV and higher lying transition energies which are in good agreement with these data.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5264375
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
EFFECTIVE MASS
ELECTRICAL PROPERTIES
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
LAYERS
LOW TEMPERATURE
LUMINESCENCE
MASS
MATERIALS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
QUANTITY RATIO
SEMICONDUCTOR MATERIALS
SPECTRA
STRAINS
SUPERLATTICES
SURFACE COATING