IR spectroscopy of GaAS-GaP{sub x}As{sub 1-x} superlattices

Journal Article · Fri Jul 01 04:00:00 EDT 1994 · Journal of Applied Spectroscopy

DOI:https://doi.org/10.1007/BF02606091· OSTI ID:171642

Venger, E F; Gorya, O S; Dmitruk, N L ^[1]

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1. Institute of Physics of Semiconductors, Kiev (Russian Federation)

Semiconductor multilayer periodic and quasiperiodic structures, namely, superlattices (SL), have been actively investigated by optical and electrical methods. In the present work we perform computational modeling of the spectra of external reflection and disturbed total internal reflection (DTIR) of SL of the GaAs-GaPAs type in the phonon spectral region, and make an estimate of their sensitivity to the SL parameters. Also, an experiment of SL of GaAs-GaP{sub x}As{sub 1-x} at x=0.4 grown by a gas-phase procedure on GaAs substrates, determine their parameters, and identify the nature of polariton extremes in the spectra. It was found that the spectra of DTIR and external reflection yield complementary and mutually independent information on the ratio of the thicknesses of the SL layers, their total thickness, and the component composition of the solid solution.

• Sponsoring Organization: USDOE
• OSTI ID: 171642
• Journal Information: Journal of Applied Spectroscopy, Journal Name: Journal of Applied Spectroscopy Journal Issue: 1-2 Vol. 60; ISSN JASYAP; ISSN 0021-9037
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
CHEMICAL PREPARATION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
OPTICAL PROPERTIES
REFLECTION
SUPERLATTICES