Electron mobilities in In/sub 0. 2/Ga/sub 0. 8/As/GaAs strained-layer superlattices

Journal Article · Tue Nov 01 04:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94523· OSTI ID:5557606

Fritz, I J; Dawson, L R; Zipperian, T E

We report the first Hall effect and resistivity measurements on strained-layer superlattices (SLS's) in the (In,Ga)As system. The samples, grown by molecular beam epitaxy, had 60 periods of alternating, 120-A-thick In/sub 0.2/Ga/sub 0.8/ As and GaAs layers. Both uniform-doped and modulation-doped structures (with Si donors) were studied. Low-temperature mobilities of over 3 x 10/sup 4/ cm/sup 2//Vs were obtained for structures with doping in only the central 30-A region of each GaAs layer. Our results are comparable to reported results on similar (Al,Ga)As superlattices, confirming that high crystalline quality can be obtained in SLS's with significant mismatch (approx.1.4%) and many interfaces (>100).

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5557606
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LAYERS
MOBILITY
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
SILICON ADDITIONS
SILICON ALLOYS
STRAINS
SUPERLATTICES