Impact ionization coefficients in In/sub 0. 2/Ga/sub 0. 8/As/GaAs strained-layer superlattices

Journal Article · Mon Jul 28 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97174· OSTI ID:5586155

Bulman, G E; Zipperian, T E; Dawson, L R

The impact ionization coefficients for electrons and holes have been measured in In/sub 0.2/Ga/sub 0.8/As/GaAs strained-layer superlattices (SLS's) for transport perpendicular to the superlattice. The pure electron and hole initiated primary photocurrents were produced in p-italic/sup +/n-italic mesa photodiodes having In/sub 0.1/Ga/sub 0.9/As alloy photon absorption regions and an SLS active region carrier concentration of 7.4 x 10/sup 15/ cm/sup -3/. The impact ionization coefficient for electrons is found to be larger than for holes with a ratio that varies from 1.8 at 2.7 x 10/sup 5/ V/cm to 1.4 at 3.8 x 10/sup 5/ V/cm.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5586155
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
CURRENTS
ELECTRIC CURRENTS
ELECTRON COLLISIONS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION COLLISIONS
IONIZATION
PHOTOCURRENTS
PHOTODIODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUPERLATTICES