Photocurrent multiplication in ion implanted lateral In/sub 0. 2/Ga/sub 0. 8/As/GaAs strained-layer superlattice photodetectors
We demonstrate the first Be/sup +/-implanted lateral In/sub 0.2/Ga/sub 0.8/As/GaAs strained-layer superlattice (SLS) avalanche photodetector. This planar device exhibits low capacitance (<1 pF), low dark current (less than 6 nA at -60 V), and large active area (100 ..mu..m x 250 ..mu..m at -50 V). In addition, an uncoated external quantum efficiency of 50% at -50 V between 775 and 880 nm is observed with response continuing to 1.03 ..mu..m. Detailed photocurrent measurements confirm the occurrence of photocurrent multiplication and indicate that the ionization coefficient of electrons is larger than that of holes for transport in the plane of the SLS. This work demonstrates the advantages of exploiting the preferred transport direction that occurs in superlattice structures through the use of ion implantation.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5409952
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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47 OTHER INSTRUMENTATION
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM IONS
CAPACITANCE
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
CURRENTS
DATA
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
FABRICATION
FIBERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
ION IMPLANTATION
IONIZATION
IONS
NUMERICAL DATA
OPTICAL FIBERS
PERFORMANCE
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PHOTODETECTORS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
RADIATION TRANSPORT
RADIATIONS
SPECTRAL RESPONSE
SUPERLATTICES