Ion-implanted strained-layer superlattice device

Conference · Sat Jan 01 04:00:00 EST 1983

OSTI ID:5653513

Myers, D R; Zipperian, T E; Biefeld, R M; Wiczer, J J

High-quality p-n junction diodes are demonstrated in Be/sup +/-implanted GaAs/sub x/P/sub 1-x//GaP strained-layer superlattices (SLSs). This is the first demonstration of electrical activation of an implanted species with useful electrical characteristics in an SLS. X-ray diffraction indicates that the superlattice structure survived the implantation and annealing, and room temperature electrical measurements indicate diode ideality factors of approx. 2.0 over seven decades of forward current for these devices. Diodes formed in SLSs with n-type background doping of 10/sup 17/cm/sup -3/ exhibit room temperature reverse leakage currents of 1.5 x 10/sup -7/ A/cm/sup 2/ at approx. 10V. The abrupt avalanche breakdown (at 100 ..mu..A) of these unpassivated devices occurs at -18V. The diodes show an uncoated peak external quantum efficiency of 30% for photons with energies slightly above the superlattice bandgap of 2.1eV.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5653513
• Report Number(s): SAND-83-1639C; CONF-831243-2; ON: DE84000101
• Country of Publication: United States
• Language: English

Related Subjects

440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
ION IMPLANTATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODETECTORS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
STRAINS
SUPERLATTICES