Zinc-implantation-disordered (InGa)As/GaAs strained-layer superlattice diodes
We have examined the properties of (InGa)As/GaAs strained-layer superlattices (SLSs) that have been disordered by implantation of 5 x 10/sup 15//cm/sup 2/, 250 keV /sup 64/Zn/sup +/ followed by controlled atmosphere annealing at 680/sup 0/C for 30 min. Ion channeling techniques indicate that the Zn-disordered regions of the SLS contain extensive crystalline damage after annealing. Simulations of the disordering process using an analytic ion range code predict that the electrical junction resulting from the implantation process is located outside the disordered region of the SLS in both the vertical and the lateral directions. Junction electroluminescence intensity for given drive current densities from the Zn-disordered SLS devices is comparable to that from reference Be-implantation-doped (SLS retained) devices and greatly exceeds that from heavily dislocated grown-junction mesa diodes in the homogeneous alloy of the average SLS composition; this result is consistent with the results of the simulations. This study demonstrates that implantation disordering can be as useful for strained-layer systems as for less severely mismatched heterojunction systems.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5585551
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:3; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
ELECTROLUMINESCENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION CHANNELING
ION IMPLANTATION
LUMINESCENCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUPERLATTICES