High-fluence ion damage effects in Ar-implanted (InGa)As/GaAs strained-layer superlattices

Journal Article · Mon Sep 14 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98823· OSTI ID:6166642

Myers, D R; Arnold, G W; Hills, C R; Dawson, L R; Doyle, B L

We have characterized (InGa)As/GaAs strained-layer superlattices (SLS's) that have been implanted with 300 keV argon ions at room temperature for fluences sufficient to induce precipitous stress relief in the implanted composite. SLS compositional modulation is lost due to ion beam mixing over much of the ion range; however, the implanted regions remain crystalline despite extensive damage near the mean ion range. High-density dislocation networks are found near the substrate-buffer interface after precipitous stress relief and are correlated with the occurrence of the effect.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6166642
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARGON IONS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DISLOCATIONS
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
ION IMPLANTATION
IONS
KEV RANGE
LINE DEFECTS
MIXING
MODULATION
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
STRESSES
SUPERLATTICES