Temperature-dependent damage production in ion-implanted strained-layer superlattices

Journal Article · Mon Aug 17 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98384· OSTI ID:6323778

Myers, D R; Arnold, G W; Dawson, L R; Biefeld, R M; Hills, C R; Doyle, B L

We have characterized damage production in both (InGa)As/GaAs and Ga(AsP)/GaP strained-layer superlattices (SLS's) for fluences sufficient to induce compositional disordering at three different implant temperatures. Dramatically different implant temperatures are required to produce similar defect distributions between the two SLS systems. Implants at lower temperatures (80 K for the (InGa)As/GaAs system, 300 K and below for the Ga(AsP)/GaP system) exhibit amorphous zones at depths consistent with the predictions of ion range codes; while implants at elevated temperatures (25/sup 0/C in (InGa)As/GaAs, 400/sup 0/C in the Ga(AsP)/GaP system) exhibit greatly reduced damage levels characterized mainly by extended defects.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6323778
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
DAMAGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION IMPLANTATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SUPERLATTICES